Dow Unveils Dowsil EG-4175: Game-Changing Silicon Gel for Next-Gen IGBT Modules
Dow, a leading Michigan-based materials science company, has unveiled Dow'sil EG-4175, a cutting-edge silicon gel designed for next-generation insulated gate bipolar transistor (IGBT) modules. This innovative product offers a range of advanced features, setting a new standard in the industry.
Dow'sil EG-4175 boasts impressive temperature resistance, withstanding heat up to 180°C. This allows for higher voltages in devices such as solar inverters, wind turbines, and electric vehicle (EV) batteries. The gel's self-healing properties enable it to repair minor cracks autonomously, ensuring long-term module protection. Additionally, its self-priming adhesion enhances module protection, and it can cure at room temperatures, simplifying the application process.
The gel's vibration absorption capabilities further contribute to its effectiveness. Dow is upgrading its IGBT materials portfolio to meet the growing demand for higher power densities in devices, with Dow'sil EG-4175 leading the way towards more efficient power systems.
Dow'sil EG-4175, with its exceptional temperature resistance, self-healing properties, and enhanced adhesion, is poised to revolutionize IGBT module technology. By enabling higher voltages and densities, it paves the way for more efficient power systems in solar, wind, EV, and other industries.
